Memory component with memory cells having changeable resistance and fabrication method therefor

US7737428B2 · kind B2 · utility

Assignee

• Qimonda AG · DE

Inventors

• Ralf Symanczyk · Bad Aibling, DE
• Thomas Roehr · Yokohama, JP

Key dates

• Filing date: Aug 29, 2005
• Grant date: Jun 15, 2010
• Expiry date: Oct 29, 2025

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/90

Abstract

The invention relates to a memory component having memory cells based on an active solid electrolyte material which can be changed in terms of its resistance value. The active solid electrolyte material is embedded between a bottom and top electrode, can be switched between an on state with a low resistance and an off state with a high resistance by comparison therewith by application of a suitable electric field between said electrodes. A resistance material is embedded in parallel with the solid electrolyte material between the electrodes.