Image sensor
US7737479B2 · kind B2 · utility
15Cited by
10References
8Claims
0Family size
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Key dates
| Filing date | Jun 27, 2008 |
| Grant date | Jun 15, 2010 |
| Priority date | — |
| Expiry date | Aug 7, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
An image sensor, in which, a planarized layer is formed on a semiconductor substrate including a pixel array region, an optical black region, and a logic region to cover a photo sensing unit array in the pixel array region, a patterned metal layer is formed on the planarized layer corresponding to the pixel array region and the logic region, but not the optical black region. An optical black layer is formed in the optical black region after a passivation layer is formed and before a color filter array is formed at a temperature less than about 400° C., and preferably contains metal material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.