Patent · US Active

Non contact method and apparatus for measurement of sheet resistance of P-N junctions

US7737680B1 · kind B1 · utility

1Cited by
2References
3Claims
0Family size

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Key dates

Filing dateJan 12, 2009
Grant dateJun 15, 2010
Priority date
Expiry dateJan 12, 2029

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01R31/2648
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A contactless sheet resistance measurement apparatus and method for measuring the sheet resistance of upper layer of ultra shallow p-n junction is disclosed. The apparatus comprises alternating light source optically coupled with first transparent and conducting electrode brought close to the wafer, the second electrode placed outside of illumination area. Using the measurement of the surface photovoltage signals inside illuminated area and outside this area and its phase shifts, linear SPV model describing its lateral distribution the sheet resistance and p-n junction conductance is determined.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.