Magnetic memory device
US7738286B2 · kind B2 · utility
4Cited by
16References
6Claims
0Family size
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Key dates
| Filing date | Dec 14, 2006 |
| Grant date | Jun 15, 2010 |
| Priority date | — |
| Expiry date | Jan 3, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/935
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic memory device comprises a magnetic tunnel junction (MTJ) connecting to a bit line to a sense line through an isolation transistor. The MTJ includes a ferromagnetic layer having a magnetic hard axis. An assist current line overlies the bit line and is insulated from the bit line. The MTJ is switchable between a first, relatively high resistance state and a second, relatively low resistance state. The assist current line applies a magnetic field along the magnetic hard axis in the ferromagnetic layer, independently of current flow through the MTJ for assisting switching of the MTJ between the first and second states.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.