Plasma processing apparatus and method
US7740737B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 21, 2005 |
| Grant date | Jun 22, 2010 |
| Priority date | — |
| Expiry date | Aug 28, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3344
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency is connected to the upper electrode. A second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber while any one of application voltage, application current, and application power from the variable DC power supply to the upper electrode is controlled, to generate plasma of the process gas so as to perform plasma etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.