Method for forming a metal oxide film
US7741173B2 · kind B2 · utility
1Cited by
5References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 9, 2007 |
| Grant date | Jun 22, 2010 |
| Priority date | — |
| Expiry date | Mar 7, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a capacitor insulation film includes the step of depositing a monoatomic film made of a metal by supplying a metal source including the metal and no oxygen, and depositing a metal oxide film including the metal by using a CVD technique. The method provides the metal oxide film having higher film properties with a higher throughput.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.