Methods of forming capacitors
US7741175B2 · kind B2 · utility
1Cited by
10References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 12, 2007 |
| Grant date | Jun 22, 2010 |
| Priority date | — |
| Expiry date | Mar 2, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31155
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a capacitor includes forming a first capacitor electrode over a semiconductor substrate. A capacitor dielectric region is formed onto the first capacitor electrode. The capacitor dielectric region has an exposed oxide containing surface. The exposed oxide containing surface of the capacitor dielectric region is treated with at least one of a borane or a silane. A second capacitor electrode is deposited over the treated oxide containing surface. The second capacitor electrode has an inner metal surface contacting against the treated oxide containing surface. Other aspects and implementations are contemplated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.