Formation and treatment of epitaxial layer containing silicon and carbon
US7741200B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 16, 2007 |
| Grant date | Jun 22, 2010 |
| Priority date | — |
| Expiry date | Jan 26, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for formation and treatment of epitaxial layers containing silicon and carbon are disclosed. Treatment converts interstitial carbon to substitutional carbon in the epitaxial layer, according to one or more embodiments. Specific embodiments pertain to the formation and treatment of epitaxial layers in semiconductor devices, for example, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices. In specific embodiments, the treatment of the epitaxial layer involves annealing for short periods of time, for example, by laser annealing, millisecond annealing, rapid thermal annealing, spike annealing and combinations thereof. Embodiments include amorphization of at least a portion of the epitaxial layer containing silicon and carbon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.