Method for manufacturing a semiconductor device using the self aligned contact (SAC) process flow for semiconductor devices with aluminum metal gates
US7741219B2 · kind B2 · utility
1Cited by
2References
7Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 29, 2007 |
| Grant date | Jun 22, 2010 |
| Priority date | — |
| Expiry date | Jun 18, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/518
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one embodiment, a method, comprises forming a diffusion layer on a semiconductor substrate, forming a selectively deposited metal or metal alloy on an aluminum gate structure by removing an aluminum oxide layer from the aluminum gate structure and depositing a zinc layer on the aluminum gate structure by a zincating process, and selectively depositing a sacrificial metal or metal alloy cap on the aluminum gate layer by displacing the zinc layer. This embodiment enables the SAC process flow on devices with Aluminum gates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.