Etch stop structure and method of manufacture, and semiconductor device and method of manufacture
US7741222B2 · kind B2 · utility
13Cited by
11References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 11, 2005 |
| Grant date | Jun 22, 2010 |
| Priority date | — |
| Expiry date | Jan 8, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An etch stop layer is formed over a first structure by depositing a metal oxide material over the first structure and annealing the deposited metal oxide material. A second structure is formed over the etch stop layer, and a formation is etched through the second structure using the etch stop layer as an etch stop.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.