Semiconductor structure formed using a sacrificial structure
US7741702B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2007 |
| Grant date | Jun 22, 2010 |
| Priority date | — |
| Expiry date | Nov 15, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure is provided which eliminates the contact resistance traditionally associated with a junction between one or more contacts and a buried conductive structure formed in the semiconductor structure. The semiconductor structure includes a first insulating layer formed on a semiconductor layer and a conductive structure formed on at least a portion of the first insulating layer. A second insulating layer is formed on at least a portion of the conductive structure. At least one contact is formed through the second insulating layer and electrically connected to the conductive structure. The contact and the conductive structure are formed as a substantially homogeneous structure in a same processing step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.