Word line transistor strength control for read and write in spin transfer torque magnetoresistive random access memory
US7742329B2 · kind B2 · utility
26Cited by
26References
29Claims
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Assignee
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Key dates
| Filing date | Jun 29, 2007 |
| Grant date | Jun 22, 2010 |
| Priority date | — |
| Expiry date | Feb 4, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1675
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Systems, circuits and methods for controlling word line voltage at a word line transistor in Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) are disclosed. A first voltage can be supplied to the word line transistor for write operations. A second voltage, which is less than the first voltage, can be supplied to the word line transistor during read operations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.