Voltage generating circuit and reference voltage generating circuit for semiconductor memory apparatus, and semiconductor system using the same
US7742347B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2007 |
| Grant date | Jun 22, 2010 |
| Priority date | — |
| Expiry date | Jun 17, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C7/1084
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A voltage generating circuit for a semiconductor memory apparatus according includes a data logic voltage generating unit that, when a data output unit outside a semiconductor memory apparatus outputs low-level data, generates an internal data logic voltage at the same potential level as the low-level data in response to an on-die termination signal. In addition, a reference voltage generating circuit for a semiconductor memory apparatus that uses the voltage generating circuit includes a reference voltage generating unit that can be configured to generate a reference voltage at an average potential level between a maximum potential and a minimum potential of input data.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.