Fabricating method of a semiconductor device
US7743482B2 · kind B2 · utility
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2References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 28, 2007 |
| Grant date | Jun 29, 2010 |
| Priority date | — |
| Expiry date | Mar 16, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/4908
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and fabricating method thereof are provided. A first substrate with an inductor cell and a through-electrode is connected to a second substrate having an RF device circuit unit. The first substrate can be stacked on the second substrate, and a connecting electrode can electrically connect the inductor cell to the RF device circuit unit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.