Water soluble resin composition and method for pattern formation using the same
US7745093B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 8, 2005 |
| Grant date | Jun 29, 2010 |
| Priority date | — |
| Expiry date | Jun 2, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/165
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In the present invention, in a water soluble resin composition for use in a method for pattern formation in which a covering layer is provided on a resist pattern formed of a radiation-sensitive resin composition capable of coping with ArF exposure to increase the width of the resist pattern and thus to realize effective formation of higher density trench or hole pattern, the size reduction level of the resist pattern layer can be further increased as compared with that in the prior art technique, and, in addition, the size reduction level dependency of the coarse-and-fine resist pattern can be reduced. A method for pattern formation using the water soluble resin composition is also provided. The water soluble resin composition which is usable for the method for pattern formation applicable to ArF excimer laser irradiation comprises a water soluble resin, an acid generating agent capable of generating an acid upon heating, a surfactant, a crosslinking agent, and a water-containing solvent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.