Image sensor and method for manufacturing the same
US7745250B2 · kind B2 · utility
210Cited by
2References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 26, 2007 |
| Grant date | Jun 29, 2010 |
| Priority date | — |
| Expiry date | Jun 17, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/018
Abstract
An image sensor and manufacturing process thereof are provided. An image sensor according to an embodiment comprises a first wafer formed with a photodiode cell without a microlens and a second wafer formed with a circuit part including transistor and a capacitor. The first wafer is stacked on the second wafer such that a connecting electrode can be used to electrically connect the photodiode cell of the first wafer to the circuit part of the second wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.