Patent · US Active

Semiconductor device and method for forming same

US7745273B2 · kind B2 · utility

4Cited by

3References

24Claims

0Family size

Assignee

Infineon Technologies Austria AG · AT

Inventors

Michael Treu · Villach, AT
Roland Rupp · Achern, DE
Michael Rueb · Faak am See, AT
Rudolf Elpelt · Erlangen, DE

Key dates

Filing date	Jul 30, 2007
Grant date	Jun 29, 2010
Priority date	—
Expiry date	May 11, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/8325
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for manufacturing a semiconductor device. The method includes providing a semiconductor body of a conductivity type, wherein the semiconductor body comprises a first surface. At least one buried region of a second conductivity type is formed in the semiconductor body and at least a surface region of the second conductivity type is formed at the first surface of the semiconductor body, wherein the buried region and the surface region are formed such that they are spaced apart from each other. The buried region is formed by deep implantation of a first dopant of the second conductivity type.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.