Michael Treu
33Patents
5h-index
41Co-inventors
69Inventor score
Filing activity: May 15, 2002 → Feb 15, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6905916B2 | Method for processing a surface of an SiC semiconductor layer and Schottky contact | Electricity | 26 | Expired |
| US8530904B2 | Semiconductor device including a normally-on transistor and a normally-off transistor | Electricity | 22 | Active |
| US8525254B2 | Silicone carbide trench semiconductor device | Electricity | 21 | Active |
| US8866253B2 | Semiconductor arrangement with active drift zone | Electricity | 10 | Active |
| US8450196B2 | Production of an integrated circuit including electrical contact on SiC | Electricity | 5 | Active |
| US7763506B2 | Method for making an integrated circuit including vertical junction field effect transistors | Electricity | 4 | Active |
| US7772621B2 | Semiconductor device with structured current spread region and method | Electricity | 4 | Active |
| US7745273B2 | Semiconductor device and method for forming same | Electricity | 4 | Active |
| US8803205B2 | Transistor with controllable compensation regions | Electricity | 4 | Active |
| US8102012B2 | Transistor component having a shielding structure | Electricity | 4 | Active |
| US8253225B2 | Device including semiconductor chip and leads coupled to the semiconductor chip and manufacturing thereof | Electricity | 3 | Active |
| US7910983B2 | MOS transistor having an increased gate-drain capacitance | Electricity | 2 | Active |
| US8188482B2 | SiC semiconductor device with self-aligned contacts, integrated circuit and manufacturing method | Electricity | 1 | Active |
| US10923432B2 | Method of manufacturing a semiconductor device with epitaxial layers and an alignment mark | Electricity | 1 | Active |
| US8492771B2 | Heterojunction semiconductor device and method | Electricity | 1 | Active |
| US9431392B2 | Electronic circuit having adjustable transistor device | Electricity | 1 | Active |
| US9530764B2 | Semiconductor arrangement with active drift zone | Electricity | 1 | Active |
| US10347490B2 | Production of an integrated circuit including electrical contact on SiC | Electricity | 1 | Active |
| US8183660B2 | Semiconductor component having rectifying junctions of different magnitudes and method for producing the same | Electricity | 1 | Active |
| US8895422B2 | Production of an integrated circuit including electrical contact on SiC | Electricity | 0 | Active |
| US7538362B2 | Lateral semiconductor diode and method for fabricating it | Electricity | 0 | Expired |
| US11605577B2 | Semiconductor device including a bidirectional switch | Electricity | 0 | Active |
| US11923276B2 | Semiconductor device including a bidirectional switch | Electricity | 0 | Active |
| US8618644B2 | Electronic device and manufacturing thereof | Electricity | 0 | Active |
| US11329126B2 | Method of manufacturing a superjunction semiconductor device | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.