Method for manufacturing SiC semiconductor device
US7745276B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 5, 2008 |
| Grant date | Jun 29, 2010 |
| Priority date | — |
| Expiry date | Feb 20, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
Abstract
A method for manufacturing a SiC semiconductor device includes: preparing a SiC substrate having a (11-20)-orientation surface; forming a drift layer on the substrate; forming a base region in the drift layer; forming a first conductivity type region in the base region; forming a channel region on the base region to couple between the drift layer and the first conductivity type region; forming a gate insulating film on the channel region; forming a gate electrode on the gate insulating film; forming a first electrode to electrically connect to the first conductivity type region; and forming a second electrode on a backside of the substrate. The device controls current between the first and second electrodes by controlling the channel region. The forming the base region includes epitaxially forming a lower part of the base region on the drift layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.