Methods of fabricating semiconductor device including fin-fet
US7745290B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 3, 2007 |
| Grant date | Jun 29, 2010 |
| Priority date | — |
| Expiry date | Jul 24, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6211
Abstract
A method of fabricating a semiconductor device including a fin field effect transistor (Fin-FET) includes forming sacrificial bars on a semiconductor substrate, patterning the sacrificial bars to form sacrificial islands on the semiconductor substrate, forming a device isolation layer to fill a space between the sacrificial islands, selectively removing the sacrificial islands to expose the semiconductor substrate below the sacrificial islands, and anisotropically etching the exposed semiconductor substrate using the device isolation layer as an etch mask to form a recessed channel region. The recessed channel region allows the channel width and channel length of a transistor to be increased, thereby reducing the occurrence of short channel effects and narrow channel effects in highly integrated semiconductor devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.