Substrate release methods and apparatuses
US7745313B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 28, 2009 |
| Grant date | Jun 29, 2010 |
| Priority date | — |
| Expiry date | May 28, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76259
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to methods and apparatuses for fracturing or breaking a buried porous semiconductor layer to separate a 3-D thin-film semiconductor semiconductor (TFSS) substrate from a 3-D crystalline semiconductor template. The method involves forming a sacrificial porous semiconductor layer on the 3-D features of the template. A variety of techniques may be used to fracture and release the mechanically weak porous semiconductor layer without damaging the TFSS substrate layer or the template layer such as pressure variations, thermal stress generation, and mechanical bending. The methods also allow for processing three dimensional features not possible with current separation processes. Optional cleaning and final lift-off steps may be performed as part of the release step or after the release step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.