Aryl dicarboxylic acid diimidazole-based compounds as n-type semiconductor materials for thin film transistors
US7745821B2 · kind B2 · utility
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14Claims
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Key dates
| Filing date | May 15, 2007 |
| Grant date | Jun 29, 2010 |
| Priority date | — |
| Expiry date | Apr 13, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A thin film transistor comprises a layer of organic semiconductor material comprising an organic semiconductor material that comprises an aryl dicarboxylic acid diimidazole-based compound. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating ac thin film transistor device, preferably by sublimation or solution-phase deposition onto a substrate, wherein the substrate temperature is no more than 150° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.