LDMOS integrated Schottky diode
US7745846B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 15, 2008 |
| Grant date | Jun 29, 2010 |
| Priority date | — |
| Expiry date | Apr 22, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/663
Abstract
A semiconductor device includes a substrate having a first conductivity type and a semiconductor layer formed over the substrate and having lower and upper surfaces. A laterally diffused metal-oxide-semiconductor (LDMOS) transistor device is formed over the substrate and includes a source region of the first conductivity type and a drain extension region of the first conductivity type formed in the semiconductor layer proximate the upper surface of the semiconductor layer, and a drain contact electrically connecting the drain extension region to the substrate. A Schottky diode is formed over the substrate and includes at least one doped region of the first conductivity type formed in the semiconductor layer proximate to the upper surface, an anode contact forming a Schottky barrier with the at least one doped region, and a cathode contact laterally spaced from the anode contact and electrically connecting at least one doped region to the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.