Gallium nitride material devices and thermal designs thereof
US7745848B1 · kind B1 · utility
26Cited by
72References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 15, 2007 |
| Grant date | Jun 29, 2010 |
| Priority date | — |
| Expiry date | Aug 15, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Gallium nitride material devices and methods associated with the devices are described. The devices may be designed to provide enhanced thermal conduction and reduced thermal resistance. The increased thermal conduction through and out of the gallium nitride devices enhances operability of the devices, including providing excellent RF operation, reliability, and lifetime.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.