Dual work function metal gate structure and related method of manufacture
US7745887B2 · kind B2 · utility
3Cited by
5References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 27, 2007 |
| Grant date | Jun 29, 2010 |
| Priority date | — |
| Expiry date | Dec 22, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and related methods of manufacture are disclosed in which dual work function metal gate electrodes are formed from a single metal layer by doping the metal layer with carbon and/or fluorine.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.