Metal oxide semiconductor transistor with Y shape metal gate
US7745889B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 2, 2009 |
| Grant date | Jun 29, 2010 |
| Priority date | — |
| Expiry date | Mar 2, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metal oxide semiconductor (MOS) transistor with a Y structure metal gate is provided. The MOS transistor includes a substrate, a Y structure metal gate positioned on the substrate, two doping regions disposed in the substrate on two sides of the Y structure metal structure, a spacer, an insulating layer positioned outside the spacer, a dielectric layer positioned outside the insulating layer and a bevel edge covering the spacer. The spacer has a vertical sidewall, and the vertical sidewall surrounds a recess. A part of the Y structure metal gate is disposed in the recess, and a part of the Y structure metal gate is positioned on the bevel edge.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.