Method to create super secondary grain growth in narrow trenches
US7745935B2 · kind B2 · utility
1Cited by
1References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 16, 2008 |
| Grant date | Jun 29, 2010 |
| Priority date | — |
| Expiry date | Feb 19, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53238
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a method for obtaining enlarged Cu grains in small trenches. More specifically it related to a method for creating enlarged copper grains or inducing super secondary grain growth in electrochemically deposited copper in narrow trenches and/or vias to be used in semiconductor devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.