RF plasma supply device

US7745955B2 · kind B2 · utility

Assignee

• HUETTINGER Elektronik GmbH + Co. KG · DE

Inventors

• Thomas Kirchmeier · Teningen, DE
• Ekkehard Mann · Gundelfingen, DE
• Michael Glück · Hamburg, DE
• Christoph Hofstetter · Teningen, DE
• Christoph Gerhardt · Glückstadt, DE
• Gerd Hintz · Schallstadt, DE

Key dates

• Filing date: Oct 16, 2006
• Grant date: Jun 29, 2010
• Expiry date: Apr 29, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H02M7/53878
• WIPO field: Electrical machinery, apparatus, energy
• WIPO sector: Electrical engineering

Abstract

The power output of an RF plasma supply device is controlled by producing at least a first and second RF power signal by means of a respective RF generator, coupling at least two RF power signals into a coupled RF power, and distributing the coupled RF power between a plasma power that is to be supplied to a plasma load and an equalizing power that is to be supplied to an equalizing load. The power output is controlled by adjusting the levels and/or the phase position of the RF power signals in such a manner that, for plasma power in the range between a predefined lower power limit and a predefined nominal power, an insignificant portion of the coupled RF power constitutes the equalizing power and, for plasma power below the predefined lower power limit, a significant portion of the coupled RF power constitutes the equalizing power.