Magneto-resistance effect element with a surface contacting with a side face of electrode having a magnetization direction
US7746601B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 22, 2008 |
| Grant date | Jun 29, 2010 |
| Priority date | — |
| Expiry date | Jul 22, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/161
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An area of an element can be made small and fluctuation in area can be reduced. A magneto-resistance effect element is provided with a first electrode with an end face; a magneto-resistance effect film which is formed such that a surface thereof comes in contact with the end face of the first electrode; and a second electrode which is formed on another surface of the magneto-resistance effect element opposed from the surface coming in contact with the surface of the first electrode. The magneto-resistance effect film includes a magnetization pinned layer whose magnetization direction is pinned, a magnetization free layer whose magnetization direction is changeable, and a first non-magnetic layer which is provided between the magnetization pinned layer and the magnetization free layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.