Process margin using discrete assist features
US7749662B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 7, 2005 |
| Grant date | Jul 6, 2010 |
| Priority date | — |
| Expiry date | Mar 13, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/36
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The subject invention provides a system and method for improving the process margin of a lithographic imaging system. The process margin improvement is achieved through the novel placement of discrete assist features and/or the use of forbidden pitches and specific pitch orientations. Novel geometries are utilized, which take advantage of line-end pull back and/or a lack of resolution of pitches perpendicular to an axis of a dipole illumination source. The strategic placement of a series of discrete scatterbar segments on a mask near positions of critical features, such as, for example, contacts, mitigates resist residue that can result from the use of a contiguous scatterbar.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.