Optimized photodiode process for improved transfer gate leakage
US7749798B2 · kind B2 · utility
3Cited by
27References
55Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 31, 2005 |
| Grant date | Jul 6, 2010 |
| Priority date | — |
| Expiry date | Apr 11, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/547
Abstract
An image sensing circuit and method is disclosed, wherein a photodiode is formed in a substrate through a series of angled implants. The photodiode is formed by a first, second and third implant, wherein at least one of the implants are angled so as to allow the resulting photodiode to extend out beneath an adjoining gate. Under an alternate embodiment, a fourth implant is added, under an increased implant angle, in the region of the second implant. The resulting photodiode structure substantially reduces or eliminates transfer gate subthreshold leakage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.