Inna Patrick
28Patents
8h-index
16Co-inventors
68Inventor score
Filing activity: Aug 29, 2002 → Jun 21, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7009227B2 | Photodiode structure and image pixel structure | Electricity | 47 | Expired |
| US6897082B2 | Method of forming well for CMOS imager | Electricity | 43 | Expired |
| US6921934B2 | Double pinned photodiode for CMOS APS and method of formation | Emerging Cross-Sectional Technologies | 35 | Expired |
| US7153719B2 | Method of fabricating a storage gate pixel design | Electricity | 14 | Expired |
| US7768047B2 | Imager element, device and system with recessed transfer gate | Electricity | 12 | Active |
| US7078745B2 | CMOS imager with enhanced transfer of charge and low voltage operation | Electricity | 8 | Expired |
| US7387908B2 | CMOS imager with enhanced transfer of charge and low voltage operation and method of formation | Electricity | 8 | Expired |
| US7718459B2 | Dual conversion gain pixel using Schottky and ohmic contacts to the floating diffusion region and methods of fabrication and operation | Electricity | 8 | Expired |
| US6767778B2 | Low dose super deep source/drain implant | Electricity | 8 | Expired |
| US7687832B2 | Method of fabricating a storage gate pixel design | Electricity | 7 | Active |
| US7432121B2 | Isolation process and structure for CMOS imagers | Electricity | 4 | Active |
| US7385232B2 | CMOS imager with enhanced transfer of charge and low voltage operation and method of formation | Electricity | 4 | Expired |
| US7847366B2 | Well for CMOS imager | Electricity | 4 | Active |
| US7420233B2 | Photodiode for improved transfer gate leakage | Emerging Cross-Sectional Technologies | 4 | Expired |
| US7749798B2 | Optimized photodiode process for improved transfer gate leakage | Emerging Cross-Sectional Technologies | 3 | Expired |
| US7495273B2 | Double pinned photodiode for CMOS APS and method of formation | Emerging Cross-Sectional Technologies | 3 | Expired |
| US9070802B2 | Image sensor and fabricating method of image sensor | Electricity | 2 | Active |
| US7704782B2 | Method of forming pixel cells with color specific characteristics | Electricity | 2 | Active |
| US7635604B2 | Well for CMOS imager and method of formation | Electricity | 2 | Expired |
| US7511354B2 | Well for CMOS imager and method of formation | Electricity | 2 | Active |
| US7829368B2 | Methods of forming double pinned photodiodes | Emerging Cross-Sectional Technologies | 1 | Active |
| US9653513B1 | CMOS image sensor and a method of forming the same | Electricity | 1 | Active |
| US7244646B2 | Pixel design to improve photodiode capacitance and method of forming same | Electricity | 1 | Expired |
| US7190041B2 | Well for CMOS imager | Electricity | 0 | Expired |
| US9153621B2 | Process of forming a back side illumination image sensor | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.