Process for forming Schottky rectifier with PtNi silicide Schottky barrier
US7749877B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 6, 2007 |
| Grant date | Jul 6, 2010 |
| Priority date | — |
| Expiry date | Nov 6, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/64
Abstract
A process for forming a Schottky barrier to silicon to a barrier height selected at a value between 640 meV and 840 meV employs the deposition of a platinum or nickel film atop the silicon surface followed by the deposition of the other of a platinum or nickel film atop the first film. The two films are then exposed to anneal steps at suitable temperatures to cause their interdiffusion and an ultimate formation of Ni2Si and Pt2Si contacts to the silicon surface. The final silicide has a barrier height between that of the Pt and Ni, and will depend on the initial thicknesses of the Pt and Ni films and annealing temperature and time. Oxygen is injected into the system to form and SiO2 passivation layer to improve the self aligned process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.