Semiconductor component including compensation zones and discharge structures for the compensation zones

US7750397B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Franz Hirler · Isen, DE
• Ralf Siemieniec · Villach, AT
• Ilja Pawel · Villach, AT

Key dates

• Filing date: Apr 18, 2008
• Grant date: Jul 6, 2010
• Expiry date: Nov 12, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/148

Abstract

A semiconductor component including compensation zones and discharge structures for the compensation zones. One embodiment provides a drift zone of a first conduction type, at least one compensation zone of a second conduction type, complementary to the first conduction type, the at least one compensation zone being arranged in the drift zone, at least one discharge structure which is arranged between the at least one compensation zone and a section of the drift zone that surrounds the compensation zone or in the compensation zone and designed to enable a charge carrier exchange between the compensation zone and the drift zone if a potential difference between an electrical potential of the compensation zone and an electrical potential of the section of the drift zone that surrounds the compensation zone is greater than a threshold value predetermined by the construction and/or the positioning of the discharge structure.