Process, voltage and temperature control for high-speed, low-power fixed and variable gain amplifiers based on MOSFET resistors
US7750738B2 · kind B2 · utility
41Cited by
6References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 20, 2008 |
| Grant date | Jul 6, 2010 |
| Priority date | — |
| Expiry date | Dec 26, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F3/45179
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An integrated circuit includes a first, diode-connected MOSFET and a second, linearly operated MOSFET serving as resistor. A current source may provide a current such that the second MOSFET shows a transconductance constant over temperature and process variations. In one embodiment the MOSFET devices are included in a variable gain amplifier for adjusting the gain.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.