Reading phase change memories with select devices
US7751226B2 · kind B2 · utility
5Cited by
2References
17Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 25, 2007 |
| Grant date | Jul 6, 2010 |
| Priority date | — |
| Expiry date | Jan 8, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/76
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A phase change memory including a threshold device, such as an ovonic threshold switch, and a storage device may be read. Reading the cell may involve applying a first voltage to a selected cell and then a second voltage, lower than the first voltage. The first voltage may be sufficient to threshold the ovonic threshold switch if the storage device is in the set state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.