Derchang Kau
57Patents
13h-index
51Co-inventors
87Inventor score
Filing activity: Sep 19, 2002 → May 5, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8385100B2 | Energy-efficient set write of phase change memory with switch | Physics | 77 | Active |
| US8649212B2 | Method, apparatus and system to determine access information for a phase change memory | Physics | 67 | Active |
| US8605531B2 | Fast verify for phase change memory with switch | Physics | 60 | Active |
| US8462577B2 | Single transistor driver for address lines in a phase change memory and switch (PCMS) array | Physics | 54 | Active |
| US8404514B2 | Fabricating current-confining structures in phase change memory switch cells | Electricity | 30 | Active |
| US9590012B2 | Self-aligned cross-point phase change memory-switch array | Electricity | 28 | Active |
| US9245926B2 | Apparatuses and methods including memory access in cross point memory | Electricity | 26 | Active |
| US8765581B2 | Self-aligned cross-point phase change memory-switch array | Electricity | 26 | Active |
| US9142271B1 | Reference architecture in a cross-point memory | Physics | 20 | Active |
| US7986549B1 | Apparatus and method for refreshing or toggling a phase-change memory cell | Physics | 20 | Active |
| US6911695B2 | Transistor having insulating spacers on gate sidewalls to reduce overlap between the gate and doped extension regions of the source and drain | Electricity | 19 | Expired |
| US8374022B2 | Programming phase change memories using ovonic threshold switches | Physics | 16 | Active |
| US9368554B2 | Apparatuses and methods including memory access in cross point memory | Electricity | 14 | Active |
| US9576659B2 | Apparatuses and methods including memory access in cross point memory | Electricity | 13 | Active |
| US9306165B2 | Replacement materials processes for forming cross point memory | Electricity | 11 | Active |
| US9287498B2 | Dielectric thin film on electrodes for resistance change memory devices | Electricity | 8 | Active |
| US7547597B2 | Direct alignment scheme between multiple lithography layers | Electricity | 8 | Active |
| US9734907B2 | Apparatuses and methods including memory access in cross point memory | Electricity | 8 | Active |
| US7764477B2 | Electrostatic discharge protection circuit including ovonic threshold switches | Electricity | 7 | Active |
| US8278641B2 | Fabricating current-confining structures in phase change memory switch cells | Electricity | 6 | Active |
| US9905296B2 | Apparatuses and methods including memory access in cross point memory | Electricity | 6 | Active |
| US8184469B2 | Stored multi-bit data characterized by multiple-dimensional memory states | Physics | 5 | Active |
| US7751226B2 | Reading phase change memories with select devices | Physics | 5 | Active |
| US9747978B2 | Reference architecture in a cross-point memory | Physics | 5 | Active |
| US9368205B2 | Set and reset operation in phase change memory and associated techniques and configurations | Physics | 4 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.