Electro-optic modulation
US7751654B2 · kind B2 · utility
58Cited by
5References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 3, 2006 |
| Grant date | Jul 6, 2010 |
| Priority date | — |
| Expiry date | Jul 16, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2203/15
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A silicon electro-optic waveguide modulator is formed using a metal-oxide-semiconductor (MOS) configuration. Various embodiments are described using different modes of operation of the MOS diode and gate oxide thicknesses. In one example, a high-speed submicron waveguide active device is formed using silicon-on-insulator. A micro-ring resonator intensity-modulator exhibits switching times on the order of tens of pS with modulation depth of 73% with a bias voltage of 5 volts.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.