Patent · US Active

Method of making MoO2 powders, products made from MoO2 powders, deposition of MoO2 thin films, and methods of using such materials

US7754185B2 · kind B2 · utility

4Cited by
2References
6Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 18, 2006
Grant dateJul 13, 2010
Priority date
Expiry dateMay 13, 2029

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10K50/813
  • WIPO fieldMaterials, metallurgy
  • WIPO sectorChemistry

Abstract

The invention relates to high purity MoO2 powder by reduction of ammonium molybdate or molybdenum trioxide using hydrogen as the reducing agent in a rotary or boat furnace. Consolidation of the powder by press/sintering, hot pressing, and/or HIP is used to make discs, slabs, or plates, which are used as sputtering targets. The MoO2 disc, slab, or plate form is sputtered on a substrate using a suitable sputtering method or other physical means to provide a thin film having a desired film thickness. The thin films have properties such as electrical, optical, surface roughness, and uniformity comparable or superior to those of indium-tin oxide (ITO) and zinc-doped ITO in terms of transparency, conductivity, work function, uniformity, and surface roughness. The MoO2 and MoO2 containing thin films can be used in organic light-emitting diodes (OLED), liquid crystal display (LCD), plasma display panel (PDP), field emission display (FED), thin film solar cell, low resistivity ohmic contacts, and other electronic and semiconductor devices.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.