Photo mask having assist pattern and method of fabricating the same
US7754398B2 · kind B2 · utility
0Cited by
4References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 25, 2007 |
| Grant date | Jul 13, 2010 |
| Priority date | — |
| Expiry date | Sep 15, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/28
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photomask has highly reliable assist patterns, and a method of fabricating the same is provided. The photomask includes a transparent substrate, circuit pattern and assist patterns. The circuit pattern recessed into the transparent substrate relative to a surface thereof has a first thickness, and assist patterns located adjacent to, and spaced apart from, the circuit pattern are recessed into the transparent substrate relative to the surface thereof while having a second thickness less than the first thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.