Light-emitting diode, method for making light-emitting diode, integrated light-emitting diode and method for making integrated light-emitting diode, method for growing a nitride-based III-V group compound semiconductor, light source cell unit, light-emitting diode

US7754504B2 · kind B2 · utility

Assignee

• SONY GROUP CORPORATION · JP

Inventors

• Akira Ohmae · Yokohama, JP
• Shigetaka Tomiya · Tokyo, JP
• Yuki Maeda · Kasai, JP
• Michinori Shiomi · Yokohama, JP
• Takaaki Ami · Yokohama, JP
• Takao Miyajima · Yokohama, JP
• Katsunori Yanashima · Yokohama, JP
• Takashi Tange · Yokohama, JP
• Atsushi Yasuda · Shizuoka, JP

Key dates

• Filing date: May 16, 2006
• Grant date: Jul 13, 2010
• Expiry date: Feb 14, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/82

Abstract

A method for making a light-emitting diode, which including the steps of: providing a substrate having at least one recessed portion on one main surface and growing a first nitride-based III-V group compound semiconductor layer through a state of making a triangle in section having a bottom surface of the recessed portion as a base thereby burying the recessed portion; laterally growing a second nitride-based III-V group compound semiconductor layer from the first nitride-based III-V group compound semiconductor layer over the substrate; and successively growing a third nitride-based III-V group compound semiconductor layer of a first conduction type, an active layer and a fourth nitride-based III-V group compound semiconductor layer of a second conduction type on the second nitride-based III-V group compound semiconductor layer.