Method of removing the growth substrate of a semiconductor light emitting device
US7754507B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 9, 2005 |
| Grant date | Jul 13, 2010 |
| Priority date | — |
| Expiry date | Feb 28, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8312
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure formed on a growth substrate and including a light emitting layer disposed between an n-type region and a p-type region is attached to a carrier by a connection that supports the semiconductor structure sufficiently to permit removal of the growth substrate. In some embodiments, the semiconductor structure is a flip chip device. The semiconductor structure may be attached to the carrier by, for example, a metal bond that supports almost the entire lateral extent of the semiconductor structure, or by interconnects such as solder or gold stud bumps. An underfill material which supports the semiconductor structure is introduced in any spaces between the interconnects. The underfill material may be a liquid that is cured to form a rigid structure. The growth substrate may then be removed without causing damage to the semiconductor structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.