Method of making a light emitting element
US7754514B2 · kind B2 · utility
42Cited by
2References
10Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 21, 2007 |
| Grant date | Jul 13, 2010 |
| Priority date | — |
| Expiry date | Dec 29, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
A method of making a light emitting element, the light emitting element with a semiconductor layer represented by: AlXInYGa1−X−YN (0≦X≦1, 0≦Y≦1, 0≦X+Y≦1), has the step of wet-etching a surface of the semiconductor layer by using an etching solution to have a roughened surface on the semiconductor layer. The wet-etching is conducted without irradiating the surface of the semiconductor layer with a light with a wavelength region corresponding to energy higher than bandgap energy of the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.