Method of forming a SiGe DIAC ESD protection structure
US7754540B2 · kind B2 · utility
14Cited by
5References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2009 |
| Grant date | Jul 13, 2010 |
| Priority date | — |
| Expiry date | Feb 27, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/711
Abstract
A diode for alternating current (DIAC) electrostatic discharge (ESD) protection circuit is formed in a silicon germanium (SiGe) hetrojunction bipolar transistor (HBT) process that utilizes a very thin collector region. ESD protection for a pair of to-be-protected pads is provided by utilizing the base structures and the emitter structures of the SiGe transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.