Scalable power field effect transistor with improved heavy body structure and method of manufacture
US7754567B2 · kind B2 · utility
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18References
35Claims
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Key dates
| Filing date | Jun 16, 2009 |
| Grant date | Jul 13, 2010 |
| Priority date | — |
| Expiry date | Jun 16, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/027
Abstract
A method for forming a field effect transistor (FET) includes the following steps. A well region of a first conductivity type is formed in a semiconductor region of a second conductivity type. A gate electrode is formed adjacent to but insulated from the well region. A source region of the second conductivity type is formed in the well region. A heavy body recess is formed extending into and terminating within the well region adjacent the source region. The heavy body recess is at least partially filled with a heavy body material having a lower energy gap than the well region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.