Methods and apparatuses for removing polysilicon from semiconductor workpieces
US7754612B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 14, 2007 |
| Grant date | Jul 13, 2010 |
| Priority date | — |
| Expiry date | Aug 4, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and apparatuses for removing polysilicon material from a semiconductor workpiece are disclosed. A particular method includes contacting a polishing pad with a semiconductor workpiece having a surface polysilicon material. The method also includes disposing a polishing liquid between the polysilicon material and the polishing pad. The polishing liquid contains an oxidizer that does not include metal elements. The method further includes moving at least one of the semiconductor workpiece and the polishing pad relative to the other while the semiconductor workpiece contacts the polishing pad and the polishing liquid. At least some of the polysilicon material is removed while the polysilicon material contacts the oxidizer in the polishing liquid, as at least one of the semiconductor workpiece and the polishing pad moves relative to the other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.