Process for producing zirconium oxide thin films
US7754621B2 · kind B2 · utility
593Cited by
43References
23Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 28, 2007 |
| Grant date | Jul 13, 2010 |
| Priority date | — |
| Expiry date | Sep 28, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention concerns a process for producing oxide thin film on a substrate by an ALD type process. According to the process, alternating vapor-phase pulses of at least one metal source material, and at least one oxygen source material are fed into a reaction space and contacted with the substrate. According to the invention, an yttrium source material and a zirconium source material are alternately used as the metal source material so as to form an yttrium-stabilized zirconium oxide (YSZ) thin film on a substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.