Wafer level package for surface acoustic wave device and fabrication method thereof
US7755151B2 · kind B2 · utility
9Cited by
5References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 2, 2006 |
| Grant date | Jul 13, 2010 |
| Priority date | — |
| Expiry date | Jul 30, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/1092
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A wafer level package for a surface acoustic wave device and a fabrication method thereof include a SAW device formed with a SAW element on an upper surface of a device wafer; a cap wafer joined on an upper part of the SAW element; a cavity part housing the SAW element between the cap wafer and the SAW device; a cap pad formed on an upper surface of the cap wafer; and a metal line formed to penetrate through the cap wafer to electrically connect the cap pad and the SAW element, the device wafer and the cap wafer being made of the same materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.