Semiconductor device provided with floating electrode

US7755168B2 · kind B2 · utility

Assignee

• Mitsubishi Electric Corporation · JP

Inventors

• Tomohide Terashima · Kasai, JP
• Shiori UOTA · Chiyoda, JP

Key dates

• Filing date: Apr 20, 2007
• Grant date: Jul 13, 2010
• Expiry date: Dec 4, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/137

Abstract

A semiconductor device has a first conductivity-type first semiconductor region, a second conductivity-type second semiconductor region and a second conductivity-type third semiconductor region both located on or above the first semiconductor region, a second conductivity-type fourth semiconductor region between the second semiconductor region and the third semiconductor region, and a first conductivity-type fifth semiconductor region between the third semiconductor region and the fourth semiconductor region. The fourth semiconductor region and the fifth semiconductor region are electrically connected by a conductive member. A distance between the fourth semiconductor region and the third semiconductor region is larger than a width of the fourth semiconductor region.