Patent · US Active

Integrated circuits, cell, cell arrangement, method of reading a cell, memory module

US7755936B2 · kind B2 · utility

5Cited by

0References

19Claims

0Family size

Assignees

Qimonda AG · DE
Altis Semiconductor, SNC · FR

Inventors

Joachim Wecker · Erlangen, DE
Manfred Ruehrig · Achern, DE

Key dates

Filing date	Jan 28, 2008
Grant date	Jul 13, 2010
Priority date	—
Expiry date	Sep 26, 2028

Classification

Technology area (CPC G)Physics
CPC primaryG11C11/1675
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

An embodiment of the invention provides an integrated circuit having a cell. The cell includes a first magnetic layer structure having a first magnetization along a first axis, a non-magnetic spacer layer structure disposed above the first magnetic layer structure, and a second magnetic layer structure disposed above the non-magnetic spacer layer structure. The second magnetic layer structure has a second magnetization along a second axis that is arranged in an angle with regard to the first axis such that by changing the direction of the second magnetization, the direction of the first magnetization along the first axis can be determined.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.